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參數(shù)資料
| 型號： | 934031850112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 6/21頁 |
| 文件大?。?/td> | 179K |
| 代理商： | 934031850112 |
1996 Oct 21
14
Philips Semiconductors
Product Specication
VHF push-pull power MOS transistor
BLF278
Fig.18 Power gain as a function of load power,
typical values.
Class-AB operation; VDS = 50 V; IDQ =2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 (per section); RGS = 2.8 (per section).
(1) Th =25 °C.
(2) Th =70 °C.
handbook, halfpage
0
100
200
300
20
0
10
MGE614
Gp
(dB)
PL (W)
(2)
(1)
Fig.19 Efficiency as a function of load power,
typical values.
Class-AB operation; VDS = 50 V; IDQ =2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 (per section); RGS = 2.8 (per section).
(1) Th =25 °C.
(2) Th =70 °C.
handbook, halfpage
0
60
40
ηD
(%)
20
0
100
200
PL (W)
300
MGE612
(2)
(1)
Fig.20 Load power as a function of input power,
typical values.
Class-AB operation; VDS = 50 V; IDQ =2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 (per section); RGS = 2.8 (per section).
(1) Th =25 °C.
(2) Th =70 °C.
handbook, halfpage
0
5
10
15
400
300
100
0
200
MGE613
PL
(W)
Pi (W)
(1)
(2)
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