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參數(shù)資料
| 型號： | 934033490118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2300 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 119K |
| 代理商： | 934033490118 |
1997 Jun 20
3
Philips Semiconductors
Product specication
Dual P-channel enhancement
mode MOS transistor
PHP225
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Pulse width and duty cycle limited by maximum junction temperature.
2. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.
3. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 27.5 K/W.
4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 90 K/W.
5. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an Rth a-tp (ambient to tie-point) of 90 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per P-channel
VDS
drain-source voltage (DC)
30
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
Ts ≤ 80 °C
2.3
A
IDM
peak drain current
note 1
10
A
Ptot
total power dissipation
Ts =80 °C; note 2
2W
Tamb =25 °C; note 3
2W
Tamb =25 °C; note 4
1W
Tamb =25 °C; note 5
1.3
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
Source-drain diode
IS
source current (DC)
Ts ≤ 80 °C
1.25
A
ISM
peak pulsed source current
note 1
5A
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