參數(shù)資料
型號(hào)： 934033490118
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 2300 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝： PLASTIC, SMD, SO-8
文件頁數(shù)： 8/12頁
文件大?。?/td> 119K
代理商： 934033490118
1997 Jun 20
5
Philips Semiconductors
Product specication
Dual P-channel enhancement
mode MOS transistor
PHP225
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
35
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per P-channel
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 A
30
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = 1mA
1
2.8
V
IDSS
drain-source leakage current
VGS = 0; VDS = 24 V
100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
±100
nA
IDon
on-state drain current
VGS = 10 V; VDS = 1V
2.3
A
VGS = 4.5 V; VDS = 5V
1
A
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 0.5 A
0.33
0.4
VGS = 10 V; ID = 1A
0.22
0.25
y
fs
forward transfer admittance
VDS = 20 V; ID = 1A
1
2
S
Ciss
input capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
250
pF
Coss
output capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
140
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
50
pF
QG
total gate charge
VGS = 10 V; VDS = 15 V;
ID = 2.3 A
10
25
nC
QGS
gate-source charge
VGS = 10 V; VDS = 15 V;
ID = 2.3 A
1
nC
QGD
gate-drain charge
VGS = 10 V; VDS = 15 V;
ID = 2.3 A
3
nC
Switching times
ton
turn-on time
VGD =0to 10 V; VDD = 20 V;
ID = 1 A; RL =20
20
80
ns
toff
turn-off time
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; RL =20
50
140
ns
Source-drain diode
VDS
source drain diode forward
voltage
VGD = 0; IS = 1.25 A
1.6
V
trr
reverse recovery time
IS = 1.25 A; di/dt = 100 A/s
150
200
ns
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PDF描述
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