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參數(shù)資料
| 型號： | 934033580115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 934033580115 |
1999 May 26
2
Philips Semiconductors
Product specication
High-speed double diode
1PS300
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS300 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
very small rectangular SOT323
(SC-70) plastic SMD package.
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode
Fig.1 Simplified outline SOT323 (SC-70) and symbol.
Marking code: A3.
Top view
21
3
MAM082
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
80
V
IF
continuous forward current
single diode loaded; see Fig.2;
note 1
200
mA
double diode loaded; see Fig.2;
note 1
170
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge
t=1
s
4A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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