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參數資料
| 型號： | 934034860118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 27.5 W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, MS-013AC |
| 封裝： | PLASTIC, SO-20 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934034860118 |
1997 Dec 02
2
Philips Semiconductors
Product specication
18-fold ESD transient voltage suppressor
BZA100
FEATURES
SO20 SMD package allows 18
separate voltage regulator diodes
in a common anode configuration
Working voltage: typ. 6.8 V
Forward voltage: max. 1.3 V
Maximum reverse peak power
dissipation: 27.5 W at tp =1ms
Maximum clamping voltage at peak
pulse current: 11 V at 2.5 A
Low leakage current: max. 2 A
ESD rating >8 kV, according
IEC 801-2.
APPLICATIONS
Where transient overvoltage
protection in voltage and ESD
sensitive equipment is required
such as:
– Computers
– Printers
– Business machines
– Communication systems
– Medical equipment.
DESCRIPTION
18-fold monolitic transient voltage
suppressor. Its 18-fold junction
common anode design protects 18
separate lines using only one
package. This device is ideal for
situations where board space is a
premium.
PINNING
PIN
DESCRIPTION
1 to 5
cathode (k1 to k5)
6 and 16
common anode (a1; a2)
7 to 15
cathode (k6 to k14)
17 to 20
cathode (k15 to k18)
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
handbook, 4 columns
SO20
MBG396
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
19
18
17
16
15
14
13
12
11
20
2
3
4
5
6
7
8
9
10
1
k18
k1
k17
k2
k16
k3
k15
k4
a2
k5
k14
a1
k13
k6
k12
k7
k11
k8
k10
k9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. DC working current limited by Ptot max.
2. One or more diodes loaded; Ts is the temperature at the soldering point.
3. One or more diodes loaded; device mounted on a printed-circuit board with Rth a-s = 43.5 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IZ
working current
note 1
mA
IF
continuous forward current
200
mA
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
4A
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse; see Fig.2
2.5
A
Ptot
total power dissipation
see Fig.3
up to Ts =60 °C; note 2
1.6
W
up to Tamb =25 °C; note 3
1.25
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 1 ms; square pulse; see Fig.4
27.5
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
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