參數(shù)資料
型號(hào): 934034900235
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SST3, 3 PIN
文件頁數(shù): 2/8頁
文件大小: 46K
代理商: 934034900235
1999 Apr 16
2
Philips Semiconductors
Objective specication
NPN resistor-equipped transistor
PDTC114TT
FEATURES
Built-in bias resistor R1 (typ. 10 k)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of an external resistor.
DESCRIPTION
NPN resistor-equipped transistor in a
SOT23 plastic package.
PNP complement: PDTA114TT.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground
3
collector/output
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
2
1
3
MAM360
Top view
R1
3
2
1
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE(1)
PDTC114TT
12
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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