參數(shù)資料
型號(hào): 934034900235
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SST3, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 46K
代理商: 934034900235
1999 Apr 16
3
Philips Semiconductors
Objective specication
NPN resistor-equipped transistor
PDTC114TT
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =50V
100
nA
ICEO
collector cut-off current
IB = 0; VCE =30V
1
A
IB = 0; VCE = 30 V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150
mV
R1
input resistor
7
10
13
k
Cc
collector capacitance
IE =ie = 0; VCB =10V;
f = 1 MHz
2.5
pF
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
600
0
101
110
102
MGM902
IC (mA)
hFE
(1)
(2)
(3)
200
400
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
101
MGM901
102
VCEsat
(V)
(2)
(3)
(1)
101
110
102
IC (mA)
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