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參數(shù)資料
| 型號： | 934036560235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, SC-61B, 4 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 159K |
| 代理商： | 934036560235 |
1995 Apr 25
2
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF1100; BF1100R
FEATURES
Specially designed for use at 9 to 12 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications such as television tuners and
professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
BF1100 marking code: M56.
handbook, halfpage
43
2
1
Top view
MAM124
s,b
d
g
1
g
2
Fig.2 Simplified outline (SOT143R) and symbol.
BF1100R marking code: M57.
handbook, halfpage
Top view
MAM125 - 1
s,b
d
g
1
g
2
34
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
14
V
ID
drain current
30
mA
Ptot
total power dissipation
200
mW
Tj
operating junction temperature
150
°C
yfs
forward transfer admittance
24
28
33
mS
Cig1-s
input capacitance at gate 1
2.2
2.6
pF
Crs
reverse transfer capacitance
f=1MHz
25
35
fF
F
noise gure
f = 800 MHz
2
dB
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