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參數(shù)資料
| 型號(hào)： | 934036560235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, SC-61B, 4 PIN |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 159K |
| 代理商： | 934036560235 |
1995 Apr 25
3
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF1100; BF1100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
14
V
ID
drain current
30
mA
IG1
gate 1 current
±10
mA
IG2
gate 2 current
±10
mA
Ptot
total power dissipation
see Fig.3
BF1100
up to Tamb =50 °C; note 1
200
mW
BF1100R
up to Tamb =40 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
+150
°C
Fig.3 Power derating curves.
handbook, halfpage
0
50
100
200
250
0
200
MLD155
150
100
50
Ptot
(mW)
T
( C)
amb
o
BF1100R
BF1100
Fig.4
Forward transfer admittance as a function
of junction temperature; typical values.
50
0
50
150
40
0
MLD156
100
30
20
10
Yfs
(mS)
T ( C)
j
o
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