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參數(shù)資料
| 型號(hào)： | 934038030127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 8 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | 934038030127 |
Philips Semiconductors
Product specification
Rectifier diodes
BY229F, BY229X series
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
isol
Peak isolation voltage from
SOD100 package; R.H.
≤ 65%; clean and
-
1500
V
both terminals to external
dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
-
2500
V
both terminals to external
sinusoidal waveform; R.H.
≤ 65%; clean
heatsink
and dustfree
C
isol
Capacitance from pin 1 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
4.8
K/W
heatsink
without heatsink compound
-
7.2
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 20 A
-
1.5
1.85
V
I
R
Reverse current
V
R = VRWM; Tj = 125 C
-
0.1
0.4
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
rr
Reverse recovery time
I
F = 1 A; VR > 30 V; -dIF/dt = 50 A/s
-
100
135
ns
Q
s
Reverse recovery charge
I
F = 2 A; VR > 30 V; -dIF/dt = 20 A/s
-
0.5
0.7
C
dI
R/dt
Maximum slope of the reverse
I
F = 2 A; -dIF/dt = 20 A/s
-
50
60
A/
s
recovery current
September 1998
2
Rev 1.200
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