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參數(shù)資料
| 型號： | 934045190127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 934045190127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9508-55
Logic level FET
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
0
2
468
10
0
20
40
60
80
100
VGS/V =
3.2
3.0
2.8
2.6
2.4
2.2
3.4
4.0
10
ID/A
VDS/V
0
20
406080
100
0
10
20
30
40
50
60
70
80
90
100
110
120
gfs/S
ID/A
0
20
40
60
80
100
120
0
5
10
15
BUK9508-55
ID / A
RDS(ON) / mOhm
VGS / V =
3
3.2
3.4
3.6
4
5
10
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0
123
4
0
20
40
60
80
100
Tj/C =
175
25
ID/A
VGS/V
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
February 1997
4
Rev 1.000
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