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參數(shù)資料
| 型號： | 934045520115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SMD, 8 PIN |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 934045520115 |
1998 Jan 29
4
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF404
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage VGS = 0; ID = 5 mA
40
V
VGS(th)
gate-source threshold voltage
ID = 50 mA; VDS =10V
2
4.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 12.5 V
0.5
mA
IGSS
gate-source leakage current
VDS = 0; VGS = ±20 V
1
A
IDSX
on-state drain current
VGS = 15 V; VDS =10V
2.3
A
RDSon
drain-source on-state resistance ID = 0.7 A; VGS =15V
1.8
2.7
gfs
forward transconductance
ID = 0.7 A; VDS = 10 V
200
270
mS
Cis
input capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
14
pF
Cos
output capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
17
pF
Crs
feedback capacitance
VGS = 0; VDS = 12.5 V; f = 1 MHz
3
pF
Fig.3
Temperature coefficient of gate-source
voltage as a function of drain current;
typical values.
VDS =10V.
handbook, halfpage
T.C.
(mV/K)
5
15
25
5
10
102
103
104
MRA254
ID(mA)
Fig.4
Drain current as a function of gate-source
voltage; typical values.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
1
2
3
0
4
8
12
16
20
MRA249
ID
(A)
VGS (V)
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