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參數(shù)資料
| 型號(hào)： | 934045520115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SMD, 8 PIN |
| 文件頁(yè)數(shù)： | 13/16頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 934045520115 |
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1998 Jan 29
6
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF404
APPLICATION INFORMATION
RF performance at Tmb ≤ 60 °C in a common source test circuit with the device soldered on a printed-circuit board with
through metallized holes.
Ruggedness in class-AB operation
The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: f = 500 MHz; VDS = 12.5 V; PL = 4 W; Tmb ≤ 60 °C.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-AB
500
12.5
50
4
≥10
≥50
typ. 11.5
typ. 55
Fig.8
Power gain and drain efficiency as
functions of load power; typical values.
CW, class-AB operation; f = 500 MHz; VDS = 12.5 V;
IDQ = 50 mA; Tmb ≤ 60 °C.
handbook, halfpage
0246
16
20
12
4
0
8
MGM520
PL (W)
Gp
(dB)
Gp
η
D
(%)
η
D
100
80
0
20
40
60
CW, class-AB operation; f = 500 MHz; VDS = 12.5 V;
IDQ = 50 mA; Tmb ≤ 60 °C.
Fig.9
Load power as a function of drive power;
typical values.
handbook, halfpage
0
6
2
4
0
600
MGM521
200
400
PL
(W)
PD (mW)
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