參數(shù)資料
型號(hào): 934045790114
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 116K
代理商: 934045790114
1998 Nov 25
4
Philips Semiconductors
Product specication
Microwave power transistor
BLS2731-10
APPLICATION INFORMATION
RF performance at Th =25 °C in a common-base test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class-C; tp = 100 s; δ = 10%
2.7 to 3.1
40
≥10
typ. 12.5
≥9
typ. 10
≥35
typ. 45
Fig.2
Power gain as a function of load power;
typical values.
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
04
8
12
16
12
Gp
(dB)
PL (W)
4
0
8
MDA227
(1)
(2)
(3)
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 3.1 GHz.
(3) f = 2.9 GHz.
Fig.3
Collector efficiency as a function of load
power; typical values.
handbook, halfpage
0
(1)
(2)
(3)
ηC
(%)
60
40
PL (W)
20
0
48
12
MDA228
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