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參數(shù)資料
| 型號： | 934045790114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 116K |
| 代理商： | 934045790114 |
1998 Nov 25
5
Philips Semiconductors
Product specication
Microwave power transistor
BLS2731-10
Fig.4
Power gain and efficiency as functions of
frequency; typical values.
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
handbook, halfpage
2.7
Gp
(dB)
Gp
ηC
(%)
ηC
2.8
f (GHz)
2.9
3.1
16
12
4
0
8
80
60
20
0
40
3
MDA229
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(3) f = 3.1 GHz.
Fig.5
Load power as a function of drive power;
typical values.
handbook, halfpage
0
(1)
(2)
(3)
PL
(W)
12
8
PD (W)
4
0
0.4
0.8
1.2
MDA230
Fig.6
Input impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =10W.
handbook, halfpage
2.6
2.8
3
3.2
20
0
16
Zi
(
)
xi
ri
12
f (GHz)
8
4
MDA231
Fig.7
Load impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =10W.
handbook, halfpage
2.6
2.8
3
3.2
20
0
16
ZL
(
)
12
f (GHz)
8
4
MDA232
XL
RL
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參數(shù)描述 |
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