參數(shù)資料
型號(hào): 934051390115
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 71K
代理商: 934051390115
1997 Oct 03
3
Philips Semiconductors
Product specication
Schottky barrier double diodes
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulsed test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
40
V
IF
continuous forward current
1A
IF(AV)
average forward current
Tamb =65 °C;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
1A
IFSM
non-repetitive peak forward current
t = 8.3
s half sinewave;
JEDEC method
10
A
IRSM
non-repetitive peak reverse current
tp = 100 s
0.5
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.5
IF = 100 mA; note 1
280
330
mV
IF = 1 A; note 1
460
500
mV
IR
reverse current
VR = 10 V; note 1; see Fig.6
15
40
A
VR = 40 V; note 1; see Fig.6
60
300
A
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.7
65
80
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
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