參數(shù)資料
型號: 934052130118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 69 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 9/14頁
文件大?。?/td> 145K
代理商: 934052130118
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP69N03LT, PHB69N03LTT
Logic level FET
PHD69N03LT
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
0
5
10
15
20
25
30
35
40
45
50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
2.2 V
2.4 V
Tj = 25 C
VGS = 10 V
2 V
2.6 V
4.5 V
2.8 V
3 V
5 V
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =4.5 V
10V
Tj = 25 C
2.8V
3 V
2.6 V
2.2 V
2.4 V
5 V
Normalised On-state Resistance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction temperature, Tj (C)
0
5
10
15
20
25
30
35
40
45
50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction Temperature, Tj (C)
typical
maximum
minimum
October 1999
4
Rev 1.600
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