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參數(shù)資料
| 型號： | 934055227135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1520 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-74, 6 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 186K |
| 代理商： | 934055227135 |
Philips Semiconductors
Product specification
P-channel enhancement mode
BSH207
MOS transistor
FEATURES
SYMBOL
QUICK REFERENCE DATA
Very low threshold voltage
V
DS = -12 V
Fast switching
Logic level compatible
I
D = -1.52 A
Subminiature surface mount
package
R
DS(ON) ≤ 0.15 (VGS = -2.5 V)
V
GS(TO) ≥ 0.4 V
GENERAL DESCRIPTION
PINNING
SOT457
P-channel, enhancement mode,
PIN
DESCRIPTION
logic
level,
field-effect
power
transistor. This device has low
1,2,5,6 drain
threshold voltage and extremely
fast switching making it ideal for
3
gate
battery powered applications and
high speed digital interfacing.
4
source
The BSH207 is supplied in the
SOT457
subminiature
surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-12
V
DGR
Drain-gate voltage
R
GS = 20 k
-
-12
V
GS
Gate-source voltage
-
± 8V
I
D
Drain current (DC)
T
a = 25 C
-
-1.52
A
T
a = 100 C
-
-0.96
A
I
DM
Drain current (pulse peak value)
T
a = 25 C
-
-6.09
A
P
tot
Total power dissipation
T
a = 25 C
-
0.417
W
T
a = 100 C
-
0.17
W
T
stg, Tj
Storage & operating temperature
- 55
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-a
Thermal resistance junction to
FR4 board, minimum
300
-
K/W
ambient
footprint
d
g
s
1
3
5
Top view
2
4
6
August 1998
1
Rev 1.000
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