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參數(shù)資料
| 型號： | 934054620135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 934054620135 |
Philips Semiconductors
PHT6N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 03 February 2003
5 of 12
9397 750 10633
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS =0V
Tj =25 °C
55
--V
Tj = 55 °C
50
--V
VGS(th)
gate-source threshold voltage
V
Tj =25 °C
234V
Tj = 150 °C
1.2
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 150 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
128
150
m
Tj = 150 °C
-
278
m
Dynamic characteristics
Qg(tot)
total gate charge
-
5.6
-
nC
Qgs
gate-source charge
-
1.2
-
nC
Qgd
gate-drain (Miller) charge
-
2.6
-
nC
Ciss
input capacitance
-
175
-
pF
Coss
output capacitance
-
58
-
pF
Crss
reverse transfer capacitance
-
40
-
pF
td(on)
turn-on delay time
VDD =30V; ID = 5 A; VGS =10V; RG =6
-
4.9
-
ns
tr
rise time
-
14.5
-
ns
td(off)
turn-off delay time
-
7.8
-
ns
tf
fall time
-
4.5
-
ns
Source-drain diode
VSD
-
0.85
1.2
V
trr
reverse recovery time
IS = 5 A; dIS/dt = 100 A/s; VGS =0V;
VR =30V
-32
-
ns
Qr
recovered charge
-
50
-
nC
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