參數(shù)資料
型號(hào): 934054620135
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 232K
代理商: 934054620135
Philips Semiconductors
PHT6N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 03 February 2003
6 of 12
9397 750 10633
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
003aaa315
0
10
20
30
0
2
46
8
10
VDS (V)
ID
(A)
VGS (V) =
16
12
10
9
8
7
6
5
003aaa319
0
2
4
6
8
02
4
68
VGS (V)
ID
(A)
Tj = 150 °C
Tj = 25 °C
003aaa317
100
150
200
250
300
350
0
5
10
15
20
ID (A)
RDSon
(m
)
VGS (V) = 10
5.5
6
6.5
7
8
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
a
Tj (°C)
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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