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參數(shù)資料
| 型號： | 934055198114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 934055198114 |
2003 Apr 15
5
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-50
handbook, halfpage
02
PD (W)
PL
(W)
10
80
60
20
0
40
46
8
MCD758
(2)
(3)
(1)
Fig.2
load power as a function of drive
power; typical values.
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.3
Power gain as a function of load
power; typical values.
VCB = 40 V; class-C; PL = 50 W; tp = 100 s; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
(3)
(1)
(2)
Gp
(dB)
20
40
80
10
2
4
8
0
6
60
PL (W)
MCD759
Fig.4
Collector efficiency as a function of load
power; typical values.
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
ηC
(%)
20
PL (W)
40
80
50
0
40
60
30
20
10
MCD760
(3)
(1)
(2)
Fig.5
Power gain and input return losses as
functions of frequency; typical values.
VCB = 40 V; class-C; PL = 50 W; tp = 100 s; δ = 10%.
handbook, halfpage
3.0
3.5
20
0
4
8
12
16
10
0
2
4
6
8
3.1
Gp
(dB)
f (GHz)
3.2
Gp
3.3
Return
Losses
(dB)
3.4
MCD761
Return
Losses
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