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參數(shù)資料
| 型號： | 934055198114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 934055198114 |
2003 Apr 15
2
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-50
FEATURES
Suitable for short and medium pulse applications
Internal input and output matching networks for an easy
circuit design
Emitter ballasting resistors improve ruggedness
Gold metallization ensures excellent reliability
Interdigitated emitter-base structure provides high
emitter efficiency
Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
PINNING - SOT422A
PIN
DESCRIPTION
1
collector
2
emitter
3
base; connected to ange
Fig.1 Simplified outline.
handbook, halfpage
1
2
3
MBK051
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common base class-C test circuit.
MODE OF OPERATION
f
(GHz)
VCB
(V)
PL
(W)
Gp
(dB)
η
C
(%)
Pulsed, class-C
3.1 to 3.5
40
50
typ. 8
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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