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參數(shù)資料
| 型號： | 934055227135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1520 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-74, 6 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 186K |
| 代理商： | 934055227135 |
Philips Semiconductors
Product specification
P-channel enhancement mode
BSH207
MOS transistor
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Ta)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Ta); conditions: VGS ≤ -10 V
Fig.3. Safe operating area. T
a = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-a = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Normalised Power Dissipation, PD (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
BSH207
0.01
0.1
1
10
100
1000
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Drain Current, ID (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
BSH207
-5
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
-2
-1.5
-1
-0.5
0
Drain-Source Voltage, VDS (V)
Drain current, ID (A)
VGS = -0.8 V
-0.9 V
-4.5 V
-1.2 V
-1 V
Tj = 25 C
-1.1 V
-1.3 V
-1.8 V
-2.5 V
BSH207
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
d.c.
100 ms
10 ms
RDS(on) = VDS/ ID
tp = 1ms
BSH207
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-5
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = -4.5V
-1.2 V
-1V
Tj = 25 C
-0.8 V
-1.1 V
-0.9 V
-2.5 V
-1.3 V
-1.8 V
August 1998
3
Rev 1.000
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