參數(shù)資料
型號(hào)： 934055350118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 115K
代理商： 934055350118
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP37N06LT, PHB37N06LT, PHD37N06LT
Logic level FET
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction
-
1.5
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
60
-
K/W
to ambient
SOT404 and SOT428 packages, pcb
50
-
K/W
mounted, minimum footprint
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model (100 pF, 1.5 k
)-
2
kV
capacitor voltage, all pins
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
(BR)GSS
Gate-source breakdown
I
G = ±1 mA;
10
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 17 A
-
28
35
m
resistance
V
GS = 10 V; ID = 17 A
-
26
32
m
T
j = 175C
-
74
m
g
fs
Forward transconductance
V
DS = 25 V; ID = 15 A
12
40
-
S
I
GSS
Gate source leakage current V
GS = ±5 V; VDS = 0 V
-
0.02
1
A
T
j = 175C
-
20
A
I
DSS
Zero gate voltage drain
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 30 A; VDD = 44 V; VGS = 5 V
-
22.5
-
nC
Q
gs
Gate-source charge
-
6
-
nC
Q
gd
Gate-drain (Miller) charge
-
11
-
nC
t
d on
Turn-on delay time
V
DD = 30 V; ID = 25 A;
-
14
21
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10
-
77
110
ns
t
d off
Turn-off delay time
Resistive load
-
55
80
ns
t
f
Turn-off fall time
-
48
65
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1050
1400
pF
C
oss
Output capacitance
-
205
245
pF
C
rss
Feedback capacitance
-
113
150
pF
September 1998
2
Rev 1.400
相關(guān)PDF資料
PDF描述
934055351118 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
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