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參數(shù)資料
| 型號： | 934055350118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 934055350118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP37N06LT, PHB37N06LT, PHD37N06LT
Logic level FET
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 17 A; VGS = 5 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 30 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0.01
0.1
1
10
100
0
0.5
1.0
1.5
2.0
2.5
Ciss
Coss
Crss
VDS/V
Thousands
pF
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
5
10
15
20
25
0
1
2
3
4
5
6
VGS/V
QG/nC
VDS = 14V
VDS = 44V
0
0.5
1
1.5
2
2.5
3
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
0.5
1
1.5
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
September 1998
5
Rev 1.400
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