參數(shù)資料
型號： 934055356118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 6/12頁
文件大?。?/td> 118K
代理商： 934055356118
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP44N06LT, PHB44N06LT, PHD44N06LT
Logic level FET
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
44
A
(body diode)
I
SM
Pulsed source current (body
-
176
A
diode)
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.95
1.2
V
I
F = 40 A; VGS = 0 V
-
1.0
-
V
t
rr
Reverse recovery time
I
F = 40 A; -dIF/dt = 100 A/s;
-
41
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.16
-
C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 35 A; VDD ≤ 25 V; VGS = 5 V;
-
70
mJ
unclamped inductive turn-off
R
GS = 50 ; Tmb = 25 C
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
September 1998
3
Rev 1.400
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