參數(shù)資料
型號(hào)： 934055356118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 118K
代理商： 934055356118
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP44N06LT, PHB44N06LT, PHD44N06LT
Logic level FET
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
1
10
100
1
10
100
1000
ID/A
VDS/V
RDS(ON) = VDS/ID
tp =
1 us
10us
100 us
1 ms
10ms
100ms
DC
0
10
2030
405060
70
20
22
24
26
28
30
32
34
RDS(ON)/mOhm
VGS/V =
ID/A
4
4.2
4.4
4.6
4.8
5
1.0E-06
0.0001
0.01
1
100
0.01
0.1
1
10
Zth/ (K/W)
t/s
0.5
0.2
0.1
0.05
0.02
0
D =
tp
T
P
t
D
0123456
0
10
20
30
40
50
60
70
80
ID/A
VGS/V
Tj/C =
175
25
0246
8
10
0
20
40
60
80
100
10
8
6
4.8
VGS = 4.6 V
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
5
Drain current, ID (A)
Drain-source voltage, VDS (V)
0
10
203040
50607080
5
10
15
20
25
30
35
40
Transconductance, gfs (S)
Drain current, ID (A)
September 1998
4
Rev 1.400
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