參數(shù)資料
型號(hào): 934055401118
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: 9 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝: PLASTIC, SOT-426, D2PAK-5
文件頁數(shù): 12/13頁
文件大?。?/td> 196K
代理商: 934055401118
Philips Semiconductors
Product specification
TOPFET high side switch
BUK215-50Y
SMD version of BUK210-50Y
Fig.10. Typical supply quiescent current.
I
B = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V
Fig.11. Typical off-state leakage current.
I
L = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.
Fig.12. Status leakage current.
I
S = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V
Fig.13. Low load current detection threshold.
I
L(OC) = f(Tj); conditions VIG = 5 V; VBG
≥ 9 V
Fig.14. Supply undervoltage thresholds.
V
BG(UV) = f(Tj); conditions VIG = 5 V; VBL
≤ 2 V
Fig.15. Supply overvoltage thresholds.
V
BG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA
100E-12
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50
0
50
100
150
200
IB / A
BUK215-50Y
Tj /
OC
max.
typ.
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
Tj /
OC
IL(OC) / A
typ.
min.
max.
BUK215-50Y
10E-12
00E-12
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50
0
50
100
150
200
Tj /
OC
IL / A
max.
typ.
BUK215-50Y
2.5
3.5
4.5
5.5
-50
0
50
100
150
200
Tj /
OC
VBG(UV) / V
typ.
on
off
BUK215-50Y
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50
0
50
100
150
200
Tj /
OC
IS / A
max.
typ.
BUK215-50Y
35
40
45
50
55
-50
0
50
100
150
200
Tj /
OC
BUK215-50Y
VBG(OV) / V
max.
min.
off
on
May 2001
8
Rev 1.010
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