參數(shù)資料
型號(hào): 934055401118
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 外設(shè)及接口
英文描述: 9 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝: PLASTIC, SOT-426, D2PAK-5
文件頁(yè)數(shù): 3/13頁(yè)
文件大?。?/td> 196K
代理商: 934055401118
Philips Semiconductors
Product specification
TOPFET high side switch
BUK215-50Y
SMD version of BUK210-50Y
Fig.28. Short circuit load threshold voltage.
V
BL(TO) = f(VBG); conditions -40C
≤ T
mb
≤ 150C
Fig.29. Typical output capacitance. T
mb = 25 C
C
bl = f(VBL); conditions f = 1 MHz, VIG = 0 V
Fig.30. Typical reverse battery characteristic.
I
G = f(VBG); conditions IL = 0 A, Tj = 25 C
Fig.31. Typical overload current, V
BL = 8V.
I
L = f(Tj); parameter VBG = 13V;tp = 300
s
Fig.32. Typical short circuit load threshold voltage.
V
BL(TO) = f(Tj); condition VBG = 16 V
Fig.33. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
5
10
15
20
25
30
35
0
1020
304050
VBG/ V
VBL(TO) / V
min.
max.
typ. 25C
BUK215-50Y
30
35
40
45
50
-50
0
50
100
150
200
Tj /
OC
IL(lim) / A
BUK215-50Y
0
1020304050
10 nF
1nF
100pF
CBL
VBL / V
BUK215-50Y
VBL(TO) / V
10.0
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-50
0
50
100
150
200
BUK215-50Y
Tj /
OC
IG / mA
-200
-150
-100
-50
0
-20
-15
-10
-5
0
VBG / V
BUK215-50Y
D =
tp
T
P
t
D
BUK215-50Y
Zth j-mb ( K / W )
t / s
1e+02
1e-01
1e-03
1e-05
1e-07
1e+01
1e-03
1e-02
1e-01
1e+00
D =
0.5
0.2
0.1
0.05
0.02
0
May 2001
11
Rev 1.010
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