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參數(shù)資料
| 型號： | 934055412118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 934055412118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9605-30A
Logic level FET
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.00001
0.001
0.1
10
0.001
0.01
0.1
1
D =
tp
T
P
t
D
Zth / (K/W)
t/S
D =
0.5
0.2
0.1
0.05
0.02
0
024
68
10
0
100
200
300
400
ID/V
VDS/V
VGS/V =
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
10.0
7.0
6.0
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
20406080
100
3
4
5
6
7
8
9
10
11
RDS(ON)/mOhm
ID/A
VGS/V =
3.0
3.2
3.4
3.6
4.0
5.0
1
10
100
1
10
100
1000
ID/A
RDS(ON) = VDS/ID
VDS/V
tp =
100mS
10mS
1mS
100uS
DC
August 1999
3
Rev 1.100
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