參數(shù)資料
型號(hào)： 934055449112
廠商： NXP SEMICONDUCTORS
元件分類： 放大器
英文描述： 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： SOT-115J, 7 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 49K
代理商： 934055449112
2001 Oct 22
2
Philips Semiconductors
Product specication
550 MHz, 34.5 dB gain push-pull amplier
BGY588N
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure optimal reliability.
APPLICATIONS
CATV systems in the 40 to 550 MHz frequency range and
intended for use as a line-extender.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN CONFIGURATION
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
34
34.5
35
dB
f = 550 MHz
35
35.5
36
dB
Itot
total current consumption (DC)
VB = 24 V
310
325
340
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
55
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
相關(guān)PDF資料
PDF描述
05W2 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:26; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
934055451118 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
934055453127 6 A, 525 V, NPN, Si, POWER TRANSISTOR, TO-220AB
934055495115 5 A, 40 V, NPN, Si, POWER TRANSISTOR
934055496115 5 A, 40 V, PNP, Si, POWER TRANSISTOR
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