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參數(shù)資料
| 型號： | 934055453127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 525 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 58K |
| 代理商： | 934055453127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1200
V
CBO
Collector-base voltage (open emitter)
-
1200
V
CEO
Collector-emitter voltage (open base)
-
525
V
EBO
Emitter-base voltage (open collector)
18
-
V
I
C
Collector current (DC)
-
6
A
I
CM
Collector current peak value
-
10
A
P
tot
Total power dissipation
T
hs ≤ 25 C
-
32
W
V
CEsat
Collector-emitter saturation voltage
I
C = 2 A; IB = 0.4 A
0.14
1.0
V
h
FEsat
DC current gain
I
C = 2 A; VCE = 5 V
21
25
t
fi
Fall time
I
C = 2.5 A; IB1 = 0.5 A
140
203
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE = 0 V
-
1200
V
CEO
Collector to emitter voltage (open base)
-
525
V
CBO
Collector to base voltage (open emitter)
-
1200
V
EBO
Emitter-base voltage (open collector)
16
-
V
I
C
Collector current (DC)
-
6
A
I
CM
Collector current peak value
-
10
A
I
B
Base current (DC)
-
3
A
I
BM
Base current peak value
-
5
A
P
tot
Total power dissipation
T
hs ≤ 25 C
-
32
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
12 3
case
b
c
e
November 1999
1
Rev 1.100
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