參數(shù)資料
型號(hào): 934055586115
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 900 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: PLASTIC, SMD, SOT343R, CMPAK-4
文件頁(yè)數(shù): 5/12頁(yè)
文件大小: 94K
代理商: 934055586115
1999 Aug 11
2
Philips Semiconductors
Product specication
Silicon MMIC amplier
BGA2001
FEATURES
Low current, low voltage
Very high power gain
Low noise figure
Integrated temperature compensated biasing
Supply and RF output pin combined.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Low noise amplifiers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
PIN
DESCRIPTION
1
GND
2
RF in
3
GND
4VS + RFout
handbook, halfpage
Top view
MAM430
21
4
3
BIAS
CIRCUIT
RFin
GND
VS+RFout
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: A1.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
4.5
V
IS
DC supply current
VVS-OUT = 2.5 V; RF input AC coupled
4.5
mA
MSG
maximum stable gain
VVS-OUT = 2.5 V; f = 1.8 GHz;
Tamb =25 °C
19.5
dB
NF
noise gure
VVS-OUT = 2.5 V; f = 1.8 GHz; ΓS = Γopt
1.3
dB
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