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參數(shù)資料
| 型號： | 934055586115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 900 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, SOT343R, CMPAK-4 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 94K |
| 代理商： | 934055586115 |
1999 Aug 11
3
Philips Semiconductors
Product specication
Silicon MMIC amplier
BGA2001
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; Tj =25 °C; unless otherwise specied.
Note
1. See application note: RNR-T45-99-B-0513.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
supply voltage
RF input AC coupled
4.5
V
IS
supply current (DC)
forced by DC voltage on RF input
30
mA
Ptot
total power dissipation
Ts ≤ 100 °C
135
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IS
supply current
VVS-OUT =1V
0.7
mA
VVS-OUT = 2.5 V
3
4.5
6
mA
VVS-OUT = 4.5 V
11
mA
MSG
maximum stable gain
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz
22
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz
19.5
dB
|s
21|
2
insertion power gain
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz
18
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz
14
dB
PL
load power
at 1 dB gain compression point;
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz;
2
dBm
NF
noise gure
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 900 MHz;
ΓS = Γopt
1.3
dB
VVS-OUT = 2.5 V;
IVS-OUT = 4 mA; f = 1.8 GHz;
ΓS = Γopt
1.3
dB
IP3(in)
input intercept point; note 1
VVS-OUT = 2.5 V;
IVS-OUT = 4.4 mA; f = 900 MHz
7.4
dBm
VVS-OUT = 2.5 V;
IVS-OUT = 4.5 mA;
f = 1800 MHz
4.5
dBm
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