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參數(shù)資料
| 型號： | 934055611215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 61K |
| 代理商： | 934055611215 |
1999 Nov 18
2
Philips Semiconductors
Product specication
Silicon RF switches
BF1108; BF1108R
FEATURES
Specially designed for low loss RF switching
up to 1 GHz.
APPLICATIONS
Various RF switching applications such as:
– Passive loop through for VCR tuner
– Transceiver switching.
DESCRIPTION
These switches are a combination of a depletion type
field-effect transistor and a bandswitching diode in an
SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these
devices provide excellent RF switching functions. The
gate of the MOSFET can be isolated from ground with the
diode, resulting in low losses. Integrated diodes between
gate and source and between gate and drain protect
against excessive input voltage surges.
PINNING
Note
1. Drain and source are interchangeable.
PIN
DESCRIPTION
1
FET gate; diode anode
2
diode cathode
3
source; note 1
4
drain; note 1
handbook, 2 columns
Top view
MSB014
12
3
4
Fig.1 Simplified outline (SOT143B).
Marking code: NGp.
handbook, 2 columns
Top view
MSB035
1
2
4
3
Fig.2 Simplified outline (SOT143R).
Marking code: NHp.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
s
21(on)
2
losses (on-state)
RS =RL =50 ;
f
≤ 1 GHz
2dB
s
21(off)
2
isolation (off-state)
30
dB
RDSon
drain-source on-resistance
VCS = 0; ID =1mA
12
20
VGSoff
pinch-off voltage
ID =20 A; VDS =1V
3
4V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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