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參數資料
| 型號： | 934055611215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數： | 7/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 934055611215 |
1999 Nov 18
4
Philips Semiconductors
Product specication
Silicon RF switches
BF1108; BF1108R
DYNAMIC CHARACTERISTICS
Common cathode; Tamb =25 °C.
Notes
1. IF = diode forward current.
2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc.
3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
FET and diode
s21(on)2 losses (on-state)
VSC =VDC = 0; RS =RL =50 ;
IF = 0; note 1; f ≤ 1 GHz
2dB
VSC =VDC = 0; RS =RL =50 ; IF =0;
f = 1 GHz
1.3
dB
VSC =VDC = 0; RS =RL =75 ; IF =0;
f
≤ 1 GHz
3dB
s21(off)2 isolation (off-state)
VSC =VDC =5V; RS =RL =50 ;
IF = 1 mA; f ≤ 1 GHz
30
dB
VSC =VDC =5V; RS =RL =50 ;
IF = 1 mA; f = 1 GHz
38
dB
VSC =VDC =5V; RS =RL =75 ;
IF = 1 mA; f ≤ 1 GHz
30
dB
RDSon
drain-source on-resistance VCS = 0; ID =1mA
12
20
Cic
input capacitance; note 2
VSC =VDC =5V; IF = 1 mA; f = 1 MHz
1
pF
VSC =VDC = 0; IF = 0; f = 1 MHz
0.65
0.9
pF
Coc
output capacitance; note 2
VSC =VDC =5V; IF = 1 mA; f = 1 MHz
1
pF
VSC =VDC = 0; IF = 0; f = 1 MHz
0.65
0.9
pF
Diode
Cd
diode capacitance
f = 1 MHz; VR =0
1.1
pF
rD
diode forward resistance
IF = 2 mA; f = 100 MHz; note 3
0.7
handbook, halfpage
MBL027
ds
s
SOT143B
SOT143R
d
g, a
c
g, a
Fig.3 Simplified diagram.
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