參數(shù)資料
型號: 934055640127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 12/14頁
文件大小: 168K
代理商: 934055640127
August 1999
7
Rev 1.100
Philips Semiconductors
Product specication
PSMN015-100B; PSMN015-100P
N-channel TrenchMOS(TM) transistor
Fig.13. Typical turn-on gate-charge characteristics
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
10
203040
506070
8090
100 110 120
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 75A
Tj = 25 C
VDD = 20 V
VDD = 80 V
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
10
20
30
40
50
60
70
80
90
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
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