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參數(shù)資料
| 型號： | 934055640127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 168K |
| 代理商： | 934055640127 |
August 1999
3
Rev 1.100
Philips Semiconductors
Product specication
PSMN015-100B; PSMN015-100P
N-channel TrenchMOS(TM) transistor
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 74 A;
-
481
mJ
energy
t
p = 100 s; Tj prior to avalanche = 25C;
V
DD ≤ 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:15
I
AS
Non-repetitive avalanche
-
75
A
current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction
-
0.65
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
50
-
K/W
footprint
ELECTRICAL CHARACTERISTICS
T
j= 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
100
-
V
voltage
T
j = -55C
89
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.0
3.0
4.0
V
T
j = 175C
1.0
-
V
T
j = -55C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
12
15
m
resistance
T
j = 175C
-
41
m
I
GSS
Gate source leakage current V
GS = ±10 V; VDS = 0 V
-
2
100
nA
I
DSS
Zero gate voltage drain
V
DS = 100 V; VGS = 0 V;
-
0.05
10
A
current
T
j = 175C
-
500
A
Q
g(tot)
Total gate charge
I
D = 75 A; VDD = 80 V; VGS = 10 V
-
109
-
nC
Q
gs
Gate-source charge
-
20
-
nC
Q
gd
Gate-drain (Miller) charge
-
50
-
nC
t
d on
Turn-on delay time
V
DD = 50 V; RD = 1.8 ;
-
30
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6
-80
-
ns
t
d off
Turn-off delay time
Resistive load
-
150
-
ns
t
f
Turn-off fall time
-
95
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
GS = 0 V; VDS = 25 V; f = 1 MHz
-
4720
-
pF
C
oss
Output capacitance
-
650
-
pF
C
rss
Feedback capacitance
-
380
-
pF
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