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參數(shù)資料
| 型號(hào)： | 934055641215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-61B, 4 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 934055641215 |
1999 Nov 18
3
Philips Semiconductors
Product specication
Silicon RF switches
BF1108; BF1108R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Soldering point of FET gate and diode anode lead.
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
FET
VDS
drain-source voltage
3V
VSD
source-drain voltage
3V
VDG
drain-gate voltage
7V
VSG
source-gate voltage
7V
ID
drain current
10
mA
Diode
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
FET and diode
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
FET
V(BR)GSS
gate-source breakdown voltage
VDS = 0; IGS = 0.1 mA
7
V
VGSoff
gate-source pinch-off voltage
VDS =1V; ID =20 A
3
4V
IDSX
drain-source leakage current
VGS = 5 V; VDS =2V
10
A
IGSS
gate cut-off current
VGS = 5 V; VDS =0
100
nA
RDSon
drain-source on-state resistance
VGS = 0; ID =1mA
12
20
Diode
VF
forward voltage
IF =10mA
1V
IR
reverse current
VR =25V
50
nA
VR =20V; Tamb =75 °C
1
A
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