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參數(shù)資料
| 型號： | 934055643118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934055643118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7608-55
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 75 A; VDD ≤ 25 V;
-
500
mJ
unclamped inductive turn-off
V
GS = 10 V; RGS = 50 ; Tmb = 25 C
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS / V
ID / A
100 us
1 ms
10 ms
100 ms
1
10
100
1000
1
10
RDS(ON) = VDS/ID
DC
100
BUKX508-55
tp = 10 us
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth / (K/W)
1E+00
1E-01
1E-02
1E-03
0
0.5
0.2
0.1
0.05
0.02
D =
tp
T
P
t
D
April 1998
3
Rev 1.000
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