參數(shù)資料
型號： 934055655118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 41 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 13/15頁
文件大小： 325K
代理商： 934055655118
Philips Semiconductors
BUK7535-100A; BUK7635-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 02 February 2001
7 of 15
9397 750 07829
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
max
typ
min
V
GS
(V)
ID
(A)
03nd30
0
5
10
15
20
25
30
35
020
40
60
ID (A)
gfs
(S)
03nd35
0
500
1000
1500
2000
2500
3000
3500
4000
4500
10-2
10-1
1
10
102
VDS (V)
C (pF)
Ciss
Coss
Crss
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