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參數(shù)資料
| 型號： | 934055655118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 41 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 325K |
| 代理商： | 934055655118 |
Philips Semiconductors
BUK7535-100A; BUK7635-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 02 February 2001
8 of 15
9397 750 07829
Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nd31
0
10
20
30
40
50
02
46
8
VGS (V)
ID
(A)
Tj = 175
oC
Tj = 25
oC
03nd29
0
2
4
6
8
10
020
40
60
QG (nC)
VGS
(V)
VDD= 80V
VDD= 14V
03nd28
0
20
40
60
0.0
0.5
1.0
1.5
VSD (V)
IS
(A)
Tj = 25
oC
Tj = 175
oC
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