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參數(shù)資料
| 型號(hào)： | 934055759127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 11/14頁(yè) |
| 文件大小： | 277K |
| 代理商： | 934055759127 |
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Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 12 March 2001
6 of 14
9397 750 08037
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
ID
(A)
VDS (V)
35
30
25
20
15
10
5
0
0.4
0.8
1.2
1.6
2.0
VGS = 10 V
8 V
6 V
5.4 V
5.2 V
5.0 V
4.8 V
4.6 V
4.4 V
003aaa057
30
25
20
15
10
0
5
Tj = 175
o
C
Tj = 25
o
C
ID
(A)
VGS (V)
0
1
2
3
45
67
8
9
10
003aaa062
5.2 V
5.4 V
6.0 V
4.4 V
4.6 V
4.8 V
5.0 V
VGS = 10V
8.0 V
0
0.04
0.06
0.12
0.16
0.20
RDSon
(
)
0
5
10
15
20
25
30
ID (A)
003aaa061
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
-40
40
80
120
160
a
Tj (
o
C)
003aaa064
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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