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參數(shù)資料
| 型號： | 934055759127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 277K |
| 代理商： | 934055759127 |
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 12 March 2001
4 of 14
9397 750 08037
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
1
K/W
Rth(j-a)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
60
K/W
SOT404 package; mounted on
printed circuit board; minimum
footprint.
50
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
10
1
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.05
0.02
Single Pulse
tp
T
P
t
T
δ =
003aaa056
0.1
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