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參數(shù)資料
| 型號： | 934055770127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-67, FPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 934055770127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX9NQ20T , PHF9NQ20T
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); VGS ≥ 10 V
Fig.3. Safe operating area
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS)
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID)
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
5 V
Tj = 25 C
VGS = 10V
5.5 V
6 V
8 V
4.5 V
0.1
1
10
100
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100us
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
01
23
45
67
89
10
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
8 V
5 V
6 V
5.5 V
4.5 V
November 2000
4
Rev 1.100
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