參數(shù)資料
型號: 934055774127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-67, FPAK-3
文件頁數(shù): 6/9頁
文件大?。?/td> 62K
代理商: 934055774127
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 14 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
2
4
6
8
10
12
14
0
10203040
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
VDD = 160 V
VDD = 40 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
10
20
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
November 2000
6
Rev 1.100
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