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參數(shù)資料
| 型號(hào)： | 934056025118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 39 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 314K |
| 代理商： | 934056025118 |
Philips Semiconductors
BUK95/9640-100A
TrenchMOS logic level FET
Product data
Rev. 03 — 08 February 2002
3 of 14
9397 750 09162
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Continuous drain current as a function of
mounting base temperature.
Tmb =25 °C; IDM single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
40
80
120
0
50
100
150
200
Tmb (C)
Pder
(%)
03nh74
0
10
20
30
40
25
50
75
100
125
150
175
200
Tmb (C)
ID
(A)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
03nh72
1
10
102
103
1
10
102
103
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
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