參數(shù)資料
型號: 934056035235
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù): 1/13頁
文件大?。?/td> 290K
代理商: 934056035235
BSH112
N-channel enhancement mode eld-effect transistor
Rev. 01 — 25 August 2000
Product specication
c
M3D088
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
BSH112 in SOT23.
2.
Features
s TrenchMOS technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package
s Gate-source ESD protection diodes.
3.
Applications
s Relay driver
s High speed line driver
s Logic level translator.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT23, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT23
N-channel MOSFET
2
source (s)
3
drain (d)
12
3
03ab44
d
g
s
03ab60
相關(guān)PDF資料
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