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參數(shù)資料
| 型號： | 934056036235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 281K |
| 代理商： | 934056036235 |
Philips Semiconductors
BSH111
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 26 April 2002
3 of 13
9397 750 09629
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
Pder
120
0
50
100
150
200
Tsp (°C)
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03aa71
10-2
10-1
1
10
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS/ ID
1ms
tp =10 s
100 s
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