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參數(shù)資料
| 型號(hào)： | 934056038118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 347K |
| 代理商： | 934056038118 |
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PHN103T
N-channel enhancement mode eld-effect transistor
Rev. 01 — 28 August 2000
Product specication
c
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PHN103T in SOT96-1 (SO8).
2.
Features
s TrenchMOS technology
s Fast switching
s Low on-state resistance
s Logic level compatible
s Surface mount package.
3.
Applications
s Motor and actuator driver
s Battery management
s High speed, low resistance switch.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT96-1, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1,2,3
source (s)
SOT96-1 (SO8)
N-channel MOSFET
4
gate (g)
5,6,7,8
drain (d)
12
34
5
6
7
8
pin 1 index
03ab52
d
g
s
03ab30
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